University of Illinois Urbana-Champaign

A Study of Newtron Irradiation Effects on Gallium Arsenide Semiconductor Materials

Yang, Siyuan

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https://hdl.handle.net/2142/96608

Description

Title
A Study of Newtron Irradiation Effects on Gallium Arsenide Semiconductor Materials
Author(s)
Yang, Siyuan
Issue Date
1989
Discipline
Nuclear, Plasma, and Radiological Engineering
Degree Name
M.S. (master's)
Degree Level
Thesis
Keyword(s)
  • nuclear engineering
  • neutron irradiation effects
  • gallium arsenide
  • semiconductor materials
  • displacement kerma
  • n-type GaAs
  • neutron fluence
  • reciprocal Hall mobility
Language
en
Type of Resource
text
Permalink
http://hdl.handle.net/2142/96608
Copyright and License Information
Copyright 2009 Chen Xi

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