Analysis of transistor laser intra-cavity photon-assisted tunneling for direct voltage modulation
Qiu, Junyi
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https://hdl.handle.net/2142/95598
Description
Title
Analysis of transistor laser intra-cavity photon-assisted tunneling for direct voltage modulation
Author(s)
Qiu, Junyi
Issue Date
2016-12-05
Director of Research (if dissertation) or Advisor (if thesis)
Feng, Milton
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
M.S.
Degree Level
Thesis
Keyword(s)
Transistor Laser
Photon-Assisted Tunneling
Abstract
High-speed optical interconnect made with semiconductor lasers is expected to play an important role in the upcoming age of big data. The technology of diode laser has been limited by its current modulation scheme in which the carrier recombination lifetime in the active region governs the ultimate speed of operation. The transistor laser, due to its enhanced carrier recombination in the bipolar junction transistor base region, is a promising candidate to replace the diode laser for high-speed optical transmitters. It was recently found that the transistor laser offers a unique voltage modulation scheme through photon-assisted tunneling at the base-collector junction, which could potentially reshape the device operation principles. This work reports the quantitative analysis of the transistor laser photon-assisted tunneling effect and its implications for future optoelectronic applications.
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