University of Illinois Urbana-Champaign

Diagnostics for ionized physical vapor deposition chambers

Wu, Yuilun

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https://hdl.handle.net/2142/92922

Description

Title
Diagnostics for ionized physical vapor deposition chambers
Author(s)
Wu, Yuilun
Issue Date
2016-07-08
Director of Research (if dissertation) or Advisor (if thesis)
Ruzic, David N.
Doctoral Committee Chair(s)
Ruzic, David N.
Committee Member(s)
  • Eden, James G.
  • Allain, Jean P.
  • Brooks, Caleb S.
Department of Study
Nuclear, Plasma, & Rad Engr
Discipline
Nuclear, Plasma, Radiolgc Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
  • Physical vapor deposition
  • Angular distribution
  • Deposition profile
  • Ion and neutral fluxes
  • Quartz crystal microbalance (QCM)
  • Gridded energy analyzer (GEA)
Abstract
As the critical dimension of the semiconductor device continues to shrink and aspect ratio continues to rise, more diagnostics are needed to accurately predict the deposition profile of features on the wafer. Traditionally, the incident ion fluxes are considered to be perfectly normal to the wafer plane due to the electric field of the plasma sheath. However from simulation results the ion flux from a magnetron discharge has a narrow angular distribution and this distribution is becoming more significant as the aspect ratio increases. In order to confirm and adjust this predicted distribution a sensor to measure angular distribution of ions in an industrial scale chamber is designed and developed. The sensor is a combined gridded energy analyzer (GEA) and a quartz crystal microbalance (QCM), with a high aspect ratio collimator in place of the normal electron repeller grid for angular measurement distribution measurements. The collimator is made of copper elements with 500μm nominal openings which provides 1 degree angular resolution. This combined QCM and GEA setup is capable to determine fluxes of metal ions, metal atoms and argon ions at 30kW DC magnetron nominal target power. The setup is able to tilt around 10 degrees about the wafer plane in 1 degree intervals and measure the angular distribution of the ion and neutral fluxes generated by the discharge.
Graduation Semester
2016-08
Type of Resource
text
Permalink
http://hdl.handle.net/2142/92922
Copyright and License Information
Copyright 2016 Yui Lun Wu

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