University of Illinois Urbana-Champaign

Development of high speed vertical cavity surface-emitting semiconductor diode laser and transistor laser

Liu, Michael E

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https://hdl.handle.net/2142/92920

Description

Title
Development of high speed vertical cavity surface-emitting semiconductor diode laser and transistor laser
Author(s)
Liu, Michael E
Issue Date
2016-07-06
Director of Research (if dissertation) or Advisor (if thesis)
Feng, Milton
Doctoral Committee Chair(s)
Feng, Milton
Committee Member(s)
  • Jin, Jianming
  • Dallesasse, John M.
  • Bayram, Can
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
  • Vertical Cavity Surface-Emitting Laser
  • Vertical Cavity Transistor Laser
Abstract
High speed semiconductor lasers are used in optical transceivers for short-reach data links. With fast-growing data capacity and traffic in the data centers around the globe, faster optical transceivers are demanded. A microcavity vertical cavity surface-emitting laser (VCSEL) is able to show a high modulation bandwidth as well as single-mode operation; however, because of the small oxide aperture (< 3 µm), a microcavity VCSEL shows high resistance and low optical power. An 850 nm oxide-confined VCSEL with an aperture ~4 µm is able to show error-free transmission at 40 Gb/s. With an advanced DBR design for parasitic reduction as well as better thermal conduction and a short 0.5-λ cavity with five quantum wells, an 850 nm VCSEL is able to demonstrate 57 Gb/s error-free transmission at 25 °C and 50 Gb/s error-free transmission at 85 °C. The dynamic carrier profile in the base of a transistor laser makes it possible to have a shorter carrier lifetime than in a diode laser. The first oxide-confined vertical cavity transistor laser (VCTL) is realized with a trench oxidation process and a lateral-feeding base metal design. To further reduce the excessive emitter series resistance, a VCTL with AlGaAs and dielectric distributed Bragg reflector (DBR) is fabricated. Because of the mismatch between the cavity design and the quantum well emission, the VCTL is only able to show stimulated emission at low temperatures.
Graduation Semester
2016-08
Type of Resource
text
Permalink
http://hdl.handle.net/2142/92920
Copyright and License Information
Copyright 2016 Michael Liu

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Graduate Theses and Dissertations at Illinois