University of Illinois Urbana-Champaign

A study of the creation and characterization of nitrogen doped CuInSe2 (CIS:N), as a potential improved back contact material for CdTe and Cu(IN_xGA_1-x)Se2 photovoltaic cells

Erickson, Thomas Glenn

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https://hdl.handle.net/2142/92675

Description

Title
A study of the creation and characterization of nitrogen doped CuInSe2 (CIS:N), as a potential improved back contact material for CdTe and Cu(IN_xGA_1-x)Se2 photovoltaic cells
Author(s)
Erickson, Thomas Glenn
Issue Date
2016-07-21
Director of Research (if dissertation) or Advisor (if thesis)
Rockett, Angus Alexander
Department of Study
Materials Science & Engineerng
Discipline
Materials Science & Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
M.S.
Degree Level
Thesis
Keyword(s)
  • Thin Film Photovoltaics
  • CuInSe2
  • Physical Vapor Deposition
  • Electronic Materials
Abstract
Nitrogen is incorporated into CuInSe2 (CIS), and other related materials, using a scalable, commonly used, technique. The growth characteristics, film morphology and electronic properties of these N doped materials, as it is affected by nitrogen, are studied, both in films grown with nitrogen, and in films implanted with nitrogen.
Graduation Semester
2016-08
Type of Resource
text
Permalink
http://hdl.handle.net/2142/92675
Copyright and License Information
Copyright 2016 Thomas Erickson

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