Growth of epitaxial nanoscale columnar copper indium diselinide thin films by introduction of sodium flouride during growth
Kardel, Justin Tynes
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https://hdl.handle.net/2142/92674
Description
Title
Growth of epitaxial nanoscale columnar copper indium diselinide thin films by introduction of sodium flouride during growth
Author(s)
Kardel, Justin Tynes
Issue Date
2016-07-27
Director of Research (if dissertation) or Advisor (if thesis)
Rockett, Angus A.
Department of Study
Materials Science & Engineerng
Discipline
Materials Science & Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
M.S.
Degree Level
Thesis
Date of Ingest
2016-11-10T17:49:14Z
Keyword(s)
CuInSe2 (CIS)
Copper indium gallium diselinide (CIGS)
Thin Films
Epitaxy
Nanostructures
Nanowires
Abstract
The effect of NaF on the growth of CuInSe2 (CIS) epitaxial thin films by a hybrid sputtering and evaporation method was studied. Low levels of NaF deposition during interruptions of epitaxial growth reduced surface roughness. Larger amounts of NaF resulted in columnar epitaxial films with <112> surface facets on the sides of the columns. X-ray diffraction shows all films to be largely epitaxial, with small amounts of (301)-surface-oriented CIS grains present in films with the highest NaF addition. In the columnar films, a buildup of Na was seen near the substrate/film interface, suggesting that Na is buried during columnar growth. I conclude that the Na plays an integral role in the creation of columns in the films based on the dose of Na added during growth. A mechanism for the transition to growth of columns with critical concentrations of NaF is proposed.
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