Uncalibrated TCAD methodology for analysis of ESD protection devices
Chen, Zaichen
Loading…
Permalink
https://hdl.handle.net/2142/90497
Description
Title
Uncalibrated TCAD methodology for analysis of ESD protection devices
Author(s)
Chen, Zaichen
Issue Date
2016-04-04
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
M.S.
Degree Level
Thesis
Keyword(s)
ESD
TCAD
Abstract
In this work, an uncalibrated TCAD methodology for simulation of electrostatic discharge (ESD) devices is presented. The methodology addresses TCAD setup issues including device construction, boundary conditions, and choosing a physical model and parameters. A major trade-off between computation complexity and accuracy, 2D vs. 3D simulations, is examined in detail. TCAD simulation results for the GGNMOS in 32 nm CMOS technology is compared with published measurement results for methodology validation. The established TCAD methodology is then applied to ESD protection silicon controlled rectifier (SCR) devices to identify physical causes for high overshoot of a certain SCR layout, and to verify proposed improvements. The performance of the SCR with the improved layout structure is characterized in silicon to prove its consistency with TCAD prediction.
Use this login method if you
don't
have an
@illinois.edu
email address.
(Oops, I do have one)
IDEALS migrated to a new platform on June 23, 2022. If you created
your account prior to this date, you will have to reset your password
using the forgot-password link below.
