SUBMILLIMETER ABSORPTION SPECTROSCOPY IN SEMICONDUCTOR MANUFACTURING PLASMAS AND COMPARISON TO THEORETICAL MODELS

Helal, Yaser H.

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https://hdl.handle.net/2142/79462 Copy

Description

Title

SUBMILLIMETER ABSORPTION SPECTROSCOPY IN SEMICONDUCTOR MANUFACTURING PLASMAS AND COMPARISON TO THEORETICAL MODELS

Author(s)

Helal, Yaser H.

Contributor(s)

• Armacost, Michael D.
• Stout, Phillip J.
• Craver, Barry
• Agarwal, Ankur
• Ewing, Paul R.
• De Lucia, Frank C.
• Neese, Christopher F.

Issue Date

23-Jun-15

Keyword(s)

Instrument/Technique Demonstration

Abstract

Plasmas used in the semiconductor manufacturing industry are of a similar nature to the environments often created for submillimeter spectroscopic study of astrophysical species. At the low operating pressures of these plasmas, submillimeter absorption spectroscopy is a method capable of measuring the abundances and temperatures of molecules, radicals, and ions without disturbing any of the properties of the plasma. These measurements provide details and insight into the interactions and reactions occurring within the plasma and their implications for semiconductor manufacturing processes. A continuous wave, 500 to 750 GHz, absorption spectrometer was designed and used to make measurements of species in semiconductor processing plasmas. Comparisons with expectations from theoretical plasma models provide a basis for validating and improving these models, which is a complex and difficult science itself. Furthermore, these comparisons are an evaluation for the use of submillimeter spectroscopy as a diagnostic tool in manufacturing processes.

Publisher

International Symposium on Molecular Spectroscopy

Type of Resource

text

Language

English

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http://hdl.handle.net/2142/79462

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