Graphene nano-ribbon and transition metal dichalcogenide field-effect transistor modeling and circuit simulation
Chen, Ying-Yu
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https://hdl.handle.net/2142/88212
Description
Title
Graphene nano-ribbon and transition metal dichalcogenide field-effect transistor modeling and circuit simulation
Author(s)
Chen, Ying-Yu
Issue Date
2015-07-17
Director of Research (if dissertation) or Advisor (if thesis)
Chen, Deming
Doctoral Committee Chair(s)
Chen, Deming
Committee Member(s)
Li, Xiuling
Rosenbaum, Elyse
Wong, Martin D.F.
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
graphene
transition metal dichalcogenide
transistor
flexible transistor
modeling
simulation
Abstract
This dissertation presents a modeling and simulation study of graphene nano-ribbon and transition metal dichalcogenide field-effect transistors. Through compact modeling, SPICE implementation of the transistors is realized, and circuit-level simulation is enabled. Extensive simulation studies are performed to evaluate the performance of these two emerging devices.
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