Arrays of lateral p-n junction GaAs planar nanowire diodes grown by selective lateral epitaxy
Choi, Wonsik
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CHOI-THESIS-2015.pdf
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https://hdl.handle.net/2142/88102
Description
Title
Arrays of lateral p-n junction GaAs planar nanowire diodes grown by selective lateral epitaxy
Author(s)
Choi, Wonsik
Issue Date
2015-07-21
Director of Research (if dissertation) or Advisor (if thesis)
Li, Xiuling
Department of Study
Electrical & Computer Engineering
Discipline
Electrical & Computer Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
M.S.
Degree Level
Thesis
Date of Ingest
2015-09-29T20:38:48Z
Keyword(s)
selective lateral epitaxy (SLE)
semiconductor nanowires (SNWs)
metal -organic chemical vapor deposition (MOCVD)
Abstract
Realizing lateral p-n junction is a critical technique to fabricate electronic and optic devices. Recently, lateral p-n junctions were achieved by ex-situ doping on thin film or in-situ doping of vertical nanowire (NW). However, fabricating lateral junctions on thin film are less effective due to the difficulties in defining abrupt junction geometry and escaping physical damages from the post-doping process. Utilizing monolithically grown lateral p-n junction vertical NW also has problem because the as-grown NWs are not compatible with conventional planar device processing.
In this thesis research, arrays of lateral p-n junction planar GaAs NW diodes grown by selective lateral epitaxy (SLE) mechanism was developed to overcome the limitations of current lateral p-n junctions in thin films and vertical NWs. Size and position controlled array of lateral p-n junction planar GaAs NWs were monolithically grown on semi-insulating GaAs (100) substrate using metal-organic chemical vapor deposition (MOCVD). The realization of lateral p-n junction diodes was confirmed by measuring two terminal I-V characteristics of the devices. The device was turned on at 1.2 V of diode voltage, and the 106 of rectification ratio and 2.18 of ideality factor were measured. The forward-biased current scales with the number of contacted NWs. Finally, the doping concentration modulation capability on SLE grown planar p-n NWs were verified.
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CHOI-THESIS-2015.pdf
