Deposition of Metal Oxides and Metal Carbonyls on Silicon Surfaces Using Solution Chemistry
Lee, Jason
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https://hdl.handle.net/2142/87883
Description
Title
Deposition of Metal Oxides and Metal Carbonyls on Silicon Surfaces Using Solution Chemistry
Author(s)
Lee, Jason
Issue Date
2002
Doctoral Committee Chair(s)
Klemperer, Walter G.
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Materials Science
Language
eng
Abstract
The Si-H bonds on the H-Si(111) surface and Co2(CO)8 in n-heptane solution reacted to form a well defined submonolayer coverage of Co(CO)4 above the surface plane of Si(111). Transmission Fourier-transform infrared spectroscopy analysis of (OC) 4Co-Si(111) yielded structural and geometric information about the adsorbate. Accurate quantitative areal concentrations of cobalt deposited on the surface were obtained using Rutherford backscattering spectrometry. X-ray photoelectron spectroscopy analysis furnished the chemical state of the adsorbates as well as quantitative information. Static secondary ion mass spectrometry analysis detected the presence of the desired product and trace amounts of byproducts on the surface. Finally, numerical simulations of irreversible adsorption were used to calculate theoretical yields for comparisons to the experimental coverage values.
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