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The phenomenon of ion-induced sputtering is integral to many applications. In magnetically confined fusion this sputtering is important for both the lifetime of plasma facing components as well as contamination of the plasma. In plasma processing the sputtering process is involved in etching directly, and deposition through the sputtering of target materials. An apparatus and method have been created and demonstrated to obtain both the angular distribution and total sputtering yield. Total yield is determined by collecting the sputtered material on a quartz crystal microbalance. The sputtered material is also collected on a pyrolytic graphite witness plate. By mapping the concentrations of the sputtered material on this plate, both polar and azimuthal angular distributions can be determined. Utilizing this setup, data has been obtained for the systems of D+ (10-700 eV) on Be at a 45 degree angle of incidence, and Ar+ (200-500 eV) on Al at normal incidence. The data obtained for D+ on Be is some of the first to become available especially at the lower energies. The Al samples although polycrystalline, had grain preferences of (100) and (110). The Al (100) sample in particular shows enhanced sputtering along the $\langle$110$\rangle$ direction at all energies. Once these effects are characterized, controlling their crystallographic orientation can enhance the performance of these sputtering targets.
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