Chemically Enhanced Physical Vapor Deposition (Cepvd) of Tantalum Nitride-Based Films for Diffusion Barrier Layers Used in ULSI Devices
Li, Ning
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https://hdl.handle.net/2142/85902
Description
Title
Chemically Enhanced Physical Vapor Deposition (Cepvd) of Tantalum Nitride-Based Films for Diffusion Barrier Layers Used in ULSI Devices
Author(s)
Li, Ning
Issue Date
2004
Doctoral Committee Chair(s)
Ruzic, David N.
Department of Study
Nuclear Engineering
Discipline
Nuclear Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Physics, Condensed Matter
Language
eng
Abstract
A zero-order semi-empirical model is established allowing the attachment of physical understanding and CEPVD experimental phenomena. The model stems from the knowledge of reactive sputtering and PECVD processes as well as the acquired CEPVD experiment results. It correlates the processing parameters with the target and film surface coverage by Ta, TaN and organic sites, from which one can predict the operation mode, either metallic or poison, and the film elemental composition. The organic by-products accounting for the detection of carbon on the substrate by AES analysis and poisoning of the target during the processing are categorized into non-volatile product (OR1) and volatile product (OR2) in a lump-sum assumption. Electron impact, H reducing and ion bombardment are considered as the enhancing mechanisms between the physical and chemical components and included as the reactants of the chemical reactions. Simulation results compare favorably with the experimental data.
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