Copper Surface Chemistry Relevant to Chemical Mechanical Planarization (Cmp)
Stewart, Karen Lynn
This item is only available for download by members of the University of Illinois community. Students, faculty, and staff at the U of I may log in with your NetID and password to view the item. If you are trying to access an Illinois-restricted dissertation or thesis, you can request a copy through your library's Inter-Library Loan office or purchase a copy directly from ProQuest.
Permalink
https://hdl.handle.net/2142/84321
Description
Title
Copper Surface Chemistry Relevant to Chemical Mechanical Planarization (Cmp)
Author(s)
Stewart, Karen Lynn
Issue Date
2008
Doctoral Committee Chair(s)
Gewirth, Andrew A.
Department of Study
Chemistry
Discipline
Chemistry
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Chemistry, Analytical
Language
eng
Abstract
A third project investigated the effect of structure of corrosion inhibitors benzotriazole and 1,2,4-triazole (TAZ) on copper removal rate during CMP. Removal rates were higher for solutions containing TAZ than solutions containing BTA. The corrosion inhibitor films were characterized using AFM, cyclic voltammetry, impedance spectroscopy, surface-enhanced Raman spectroscopy, and mass spectrometry. Inhibitor films formed from TAZ were thicker, more permeable, and rougher than films formed from BTA. The addition of glycine to these solutions showed an increase in corrosion for the TAZ-covered surface, little change to the BTA-covered surface, and an increase in removal for both systems. This study correlated removal rate with the physical properties of these two different corrosion inhibitors.
Use this login method if you
don't
have an
@illinois.edu
email address.
(Oops, I do have one)
IDEALS migrated to a new platform on June 23, 2022. If you created
your account prior to this date, you will have to reset your password
using the forgot-password link below.
