Formation of Porous Silicon Carbide and Its Suitability as a Chemical and Temperature Detector
Rittenhouse, Tilghman Lee
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https://hdl.handle.net/2142/84162
Description
Title
Formation of Porous Silicon Carbide and Its Suitability as a Chemical and Temperature Detector
Author(s)
Rittenhouse, Tilghman Lee
Issue Date
2004
Doctoral Committee Chair(s)
Bohn, Paul W.
Department of Study
Chemistry
Discipline
Chemistry
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Materials Science
Language
eng
Abstract
Anodically etched PSiC films are then investigated for their suitability as chemical and temperature detectors. PSiC layers were unresponsive in interferometry for a wide variety of adsorbate gases, and this method of analyte detection proved unsuccessful. Conductometric investigations show that PSiC has a measurable response to high concentrations of hydrogen gas (∼6% decrease in resistance when exposed to 20% H2) comparable to currently used platinum alloy resistive films. Current hydrogen sensing arrays may be improved by the introduction of a PSiC sensor for the specific role of high concentration sensing.
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