Characterization of a Keggin Polyoxometalate on Metal and Semiconductor Surfaces
Teague, Craig Matthew
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https://hdl.handle.net/2142/84120
Description
Title
Characterization of a Keggin Polyoxometalate on Metal and Semiconductor Surfaces
Author(s)
Teague, Craig Matthew
Issue Date
2003
Doctoral Committee Chair(s)
Gewirth, Andrew A.
Department of Study
Chemistry
Discipline
Chemistry
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Materials Science
Language
eng
Abstract
Finally, studies of alpha-[SiW12O40]4- on Si surfaces are undertaken. In the first route, the Si surface is derivatized with a multicationic layer and alpha-[SiW12O 40]4- is assembled on this layer via electrostatic attraction. Characterization of this layer indicates that there is a substantial amount of alpha-[SiW12O40]4- present on the surface and that the molecule is intact. In the second route, the Si surface is etched and then reacted with alpha-[SiW12O 40]4-, with the goal being covalent attachment of alpha-[SiW12O40]4- directly to the Si surface. Utilizing a specific deposition scheme, the results show that alpha-[SiW12O40]4- is likely present on the surface as a very thin layer.
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