Bulk Growth of Semiconductor Crystals in a Magnetic Field: A Study of Dopant Transport
Ma, Nancy
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https://hdl.handle.net/2142/83949
Description
Title
Bulk Growth of Semiconductor Crystals in a Magnetic Field: A Study of Dopant Transport
Author(s)
Ma, Nancy
Issue Date
1997
Doctoral Committee Chair(s)
Walker, J.S.
Department of Study
Mechanical Engineering
Discipline
Mechanical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Materials Science
Language
eng
Abstract
Our model for the unsteady transport of a dopant during the entire period of time required to grow a crystal assumes that the externally applied magnetic field is sufficiently strong that inertial effects and convective heat transfer are negligible. We divide the semiconductor melt into (1) mass-diffusion boundary layers where convective and diffusive mass transfer are comparable, and (2) a core region where diffusion is negligible, so that the concentration of each fluid particle is constant. A Lagrangian description of motion is used to track each fluid particle during its transits across the core between diffusion layers. The dopant distribution in each layer depends on the concentrations of all fluid particles which are entering this layer. The dopant distribution is very non-uniform throughout the melt and is far from the instantaneous steady state at each stage during crystal growth. Our transient model is the first model to predict the dopant distribution in the entire crystal. The predictions of this asymptotic model are confirmed by a numerical solution to the full mass transport equation.
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