Effect of Nanoscale Defects on Electrical and Optical Properties in Iii-V Semiconductors
You, Jeong Ho
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https://hdl.handle.net/2142/83894
Description
Title
Effect of Nanoscale Defects on Electrical and Optical Properties in Iii-V Semiconductors
Author(s)
You, Jeong Ho
Issue Date
2007
Doctoral Committee Chair(s)
Johnson, Harley T.
Department of Study
Mechanical Engineering
Discipline
Mechanical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Materials Science
Language
eng
Abstract
The Schrodinger equation, in a real space k·p Hamiltonian formation, is solved using the finite element method to study effects of edge and screw dislocations on optical properties in GaN. Energy levels and corresponding wave functions are obtained for the conduction and valence bands, and spontaneous emission spectra are evaluated to compare with available experimental results. Inhomogeneous band edge shifts for each subband due to the strain fields associated with each type of dislocation, plus the electrostatic potential of edge dislocations, generate spatial separation between electrons and holes resulting in optical emission reduction. Both calculated and experimental data show emission intensity reduction as dislocation density increases. Dislocation effects in GaAs are then investigated and compared with GaN. It is shown that GaAs is more sensitive to dislocations due to a comparatively light effective mass and large deformation fields of the dislocations.
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