Structure, Stress and Surface Evolution in Silicon Due to Ion Bombardment
Kalyanasundaram, Nagarajan
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https://hdl.handle.net/2142/83886
Description
Title
Structure, Stress and Surface Evolution in Silicon Due to Ion Bombardment
Author(s)
Kalyanasundaram, Nagarajan
Issue Date
2007
Doctoral Committee Chair(s)
Johnson, Harley T.
Freund, Jonathan B.
Department of Study
Mechanical Engineering
Discipline
Mechanical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Materials Science
Language
eng
Abstract
In the second part of the work, a new multiscale computational method to study surface evolution is developed. In the new method, called crater function method, an average response of the silicon surface to a single argon impact is computed using molecular dynamics simulations at 500eV beam energies. These average responses (called crater functions) show the presence of ion-stimulated mass rearrangement at the surface in addition to mass removal by sputtering. These crater functions are incorporated into a continuum transport model to study the long-time surface evolution of micrometer-sized targets. These explain experimentally observed surface evolution and long-time amplitude saturation better than existing theoretical models.
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