Modeling Plasma Equipment and Feature Profile in Ionized Metal Physical Vapor Deposition
Lu, Junqing
This item is only available for download by members of the University of Illinois community. Students, faculty, and staff at the U of I may log in with your NetID and password to view the item. If you are trying to access an Illinois-restricted dissertation or thesis, you can request a copy through your library's Inter-Library Loan office or purchase a copy directly from ProQuest.
Permalink
https://hdl.handle.net/2142/83756
Description
Title
Modeling Plasma Equipment and Feature Profile in Ionized Metal Physical Vapor Deposition
Author(s)
Lu, Junqing
Issue Date
2001
Doctoral Committee Chair(s)
Kushner, Mark J.
Department of Study
Mechanical Engineering
Discipline
Mechanical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Materials Science
Language
eng
Abstract
A three-dimensional HPEM is employed to examine the consequences of asymmetric excitation due to the transmission line effects and irregular sputter tracks on species densities and fluxes. It was found that for typical conditions for Al IMPVD the metal species have improved symmetry due to charge exchange reactions and subsequent diffusion. The symmetry and uniformity of the metal species above the wafer significantly improve when increasing the aspect ratio of the plasma region or increasing the pressure, accompanied by a decrease in the magnitude of metal fluxes. Irregular sputter tracks act as asymmetric sources and cause asymmetries in the sputtered metal species and their fluxes to the substrate.
Use this login method if you
don't
have an
@illinois.edu
email address.
(Oops, I do have one)
IDEALS migrated to a new platform on June 23, 2022. If you created
your account prior to this date, you will have to reset your password
using the forgot-password link below.