Silicon (011) and Silicon Germanium (011) Gas-Source Molecular Beam Epitaxy: Surface Reconstructions, Growth Kinetics, and Germanium Segregation
Taylor, Nerissa Sue
This item is only available for download by members of the University of Illinois community. Students, faculty, and staff at the U of I may log in with your NetID and password to view the item. If you are trying to access an Illinois-restricted dissertation or thesis, you can request a copy through your library's Inter-Library Loan office or purchase a copy directly from ProQuest.
Permalink
https://hdl.handle.net/2142/82932
Description
Title
Silicon (011) and Silicon Germanium (011) Gas-Source Molecular Beam Epitaxy: Surface Reconstructions, Growth Kinetics, and Germanium Segregation
Author(s)
Taylor, Nerissa Sue
Issue Date
2000
Doctoral Committee Chair(s)
Greene, Joseph E.
Department of Study
Materials Science and Engineering
Discipline
Materials Science and Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Materials Science
Language
eng
Abstract
Ge surface segregation occurs during Si1--xGex(011) GS-MBE. Ge surface coverages thetaGe increase with x, ranging from 0.27 to 0.74 ML for x = 0.04--0.20. At a given film composition, theta Ge decreases with decreasing Ts due to the corresponding increase in the fraction of H-bonded Si surface atoms, fSi,H. From these data, we find that the Ge segregation enthalpy DeltaHs for Si1--xGex(011) varies from --0.18 eV at Ts = 750°C (fSi,H < 0.003) to --0.09 eV at Ts = 475°C (fSi,H = 0.22).
Use this login method if you
don't
have an
@illinois.edu
email address.
(Oops, I do have one)
IDEALS migrated to a new platform on June 23, 2022. If you created
your account prior to this date, you will have to reset your password
using the forgot-password link below.
