Microstructure and Electrical Properties of Mocvd-Derived Perovskite Lead Zirconium(x) Titanium(1-X) Oxygen(3) and Lead (Scandium Tantalum)(1-X) Titanium(x) Oxygen(3) Thin Films on Lanthanum Nickel Oxide Electrode-Buffered Silicon

Lin, Chun-Hsiung

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Description

Title

Microstructure and Electrical Properties of Mocvd-Derived Perovskite Lead Zirconium(x) Titanium(1-X) Oxygen(3) and Lead (Scandium Tantalum)(1-X) Titanium(x) Oxygen(3) Thin Films on Lanthanum Nickel Oxide Electrode-Buffered Silicon

Author(s)

Lin, Chun-Hsiung

Issue Date

2000

Doctoral Committee Chair(s)

Chen, Haydn

Department of Study

Materials Science and Engineering

Discipline

Materials Science and Engineering

Degree Granting Institution

University of Illinois at Urbana-Champaign

Degree Name

Ph.D.

Degree Level

Dissertation

Keyword(s)

Engineering, Materials Science

Language

eng

Abstract

(3) Using the experience accumulated from growing PZT thin films, we expanded the work to grow relaxor ferroelectric thin films. Solid solutions of Pb(Sc1/2Ta1/2)1-xTixO 3 (x = 0--0.3) (PSTT) were grown. Phase evolution of the PSTT thin films with respect to the growth conditions, including growth temperature, processing of the bottom electrode and the individual source flow rates, is discussed. The diffuse phase transition of the relaxor ferroelectric thin film was characterized by its dielectric dispersion. Moreover, effect of an AC field on the dielectric relaxation behavior of the relaxor PSTT thin films was studied. The results were qualitatively explained by the current theories of relaxor ferroelectrics. Pyroelectric properties of the PSTT thin films were also demonstrated.

Graduation Semester

2000

Type of Resource

text

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