Microstructure Evolution in Ion -Implanted Aluminum Gallium Arsenide
Lagow, Benjamin Wilson
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https://hdl.handle.net/2142/82925
Description
Title
Microstructure Evolution in Ion -Implanted Aluminum Gallium Arsenide
Author(s)
Lagow, Benjamin Wilson
Issue Date
1999
Doctoral Committee Chair(s)
Robertson, Ian M.
Department of Study
Materials Science and Engineering
Discipline
Materials Science and Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
The fact that the microstructure changes gradually rather than abruptly as aluminum content is increased suggests that there is a single underlying mechanism responsible for the varied microstructures observed in implanted AlxGa1-xAs. An amorphization model based on the physical and thermal properties of AlxGa1-xAs is presented. The variation of the microstructure with Al content is demonstrated to be a function of the distribution of energetic recoils in the material during implantation.
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