Ultra-High B Doping During Si(1-X)ge(x)(001) Gas-Source Molecular-Beam Epitaxy: A Mechanistic Study of Layer Growth Kinetics, Dopant Incorporation, Electrical Activation, and Carrier Transport

Glass, Glenn Aaron

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Description

Title

Ultra-High B Doping During Si(1-X)ge(x)(001) Gas-Source Molecular-Beam Epitaxy: A Mechanistic Study of Layer Growth Kinetics, Dopant Incorporation, Electrical Activation, and Carrier Transport

Author(s)

Glass, Glenn Aaron

Issue Date

1999

Doctoral Committee Chair(s)

Greene, Joseph E.

Department of Study

Materials Science and Engineering

Discipline

Materials Science and Engineering

Degree Granting Institution

University of Illinois at Urbana-Champaign

Degree Name

Ph.D.

Degree Level

Dissertation

Date of Ingest

2015-09-25T20:53:39Z

Keyword(s)

Engineering, Electronics and Electrical

Language

eng

Abstract

CB in Si1-xGex(001) increases with precursor flux ratio and B is incorporated into active sites at concentrations to C*B (Ts) = 2.5 x 1020 and 4.6 x 1020 cm-3 for x = 0 and 0.18 at Ts = 600 and 500°C, respectively. At higher B concentrations, there is a large decrease in the activated fraction of incorporated B. The total acceptor concentration continues to increase. No B precipitates or misfit dislocations were detected by HR-XRD or TEM. The out-of-plane lattice constant a⊥ decreases linearly with increasing C*B and non-linearly, for CB > C*B . Electrical properties are in good agreement with theoretical values to C*B . When thetaB > thetaB,sat, B accumulates in the upper layer, and a parallel incorporation channel becomes available in which B is incorporated as B-pairs which are electrically inactive.

Graduation Semester

1999

Type of Resource

text

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http://hdl.handle.net/2142/82923

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