University of Illinois Urbana-Champaign

Ultra-High B Doping During Si(1-X)ge(x)(001) Gas-Source Molecular-Beam Epitaxy: A Mechanistic Study of Layer Growth Kinetics, Dopant Incorporation, Electrical Activation, and Carrier Transport

Glass, Glenn Aaron

Content Files
9953025.pdf

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https://hdl.handle.net/2142/82923

Description

Title
Ultra-High B Doping During Si(1-X)ge(x)(001) Gas-Source Molecular-Beam Epitaxy: A Mechanistic Study of Layer Growth Kinetics, Dopant Incorporation, Electrical Activation, and Carrier Transport
Author(s)
Glass, Glenn Aaron
Issue Date
1999
Doctoral Committee Chair(s)
Greene, Joseph E.
Department of Study
Materials Science and Engineering
Discipline
Materials Science and Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Date of Ingest
2015-09-25T20:53:39Z
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
CB in Si1-xGex(001) increases with precursor flux ratio and B is incorporated into active sites at concentrations to C*B (Ts) = 2.5 x 1020 and 4.6 x 1020 cm-3 for x = 0 and 0.18 at Ts = 600 and 500°C, respectively. At higher B concentrations, there is a large decrease in the activated fraction of incorporated B. The total acceptor concentration continues to increase. No B precipitates or misfit dislocations were detected by HR-XRD or TEM. The out-of-plane lattice constant a⊥ decreases linearly with increasing C*B and non-linearly, for CB > C*B . Electrical properties are in good agreement with theoretical values to C*B . When thetaB > thetaB,sat, B accumulates in the upper layer, and a parallel incorporation channel becomes available in which B is incorporated as B-pairs which are electrically inactive.
Graduation Semester
1999
Type of Resource
text
Permalink
http://hdl.handle.net/2142/82923

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