H-Mediated Film Growth and Dopant Incorporation Kinetics During Silicon Germanium(001):boron Gas-Source Molecular Beam Epitaxy
Kim, Hyungjun
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https://hdl.handle.net/2142/82912
Description
Title
H-Mediated Film Growth and Dopant Incorporation Kinetics During Silicon Germanium(001):boron Gas-Source Molecular Beam Epitaxy
Author(s)
Kim, Hyungjun
Issue Date
1998
Doctoral Committee Chair(s)
Greene, J.E.
Department of Study
Materials Science and Engineering
Discipline
Materials Science and Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Physics, Condensed Matter
Language
eng
Abstract
Based on all the above results, the growth kinetics of B doped Si 1-xGex(001) GS-MBE were modeled. Film deposition rates RSiGe decrease by ≈50% with increasing CB ≥ 5 x 1019 cm-3 at Ts = 500°C. The TPD results were used to determine the B segregation enthalpy, -0.4 eV, significantly lower than the value for Si(001):B, -0.53 eV.
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