Growth of Wurtzite Gallium Nitride Epitaxial Films on Sapphire Substrate by Reactive Molecular Beam Epitaxy and Material Characterization
Kim, Wook
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https://hdl.handle.net/2142/82906
Description
Title
Growth of Wurtzite Gallium Nitride Epitaxial Films on Sapphire Substrate by Reactive Molecular Beam Epitaxy and Material Characterization
Author(s)
Kim, Wook
Issue Date
1998
Doctoral Committee Chair(s)
Morkoc, Hadis
Department of Study
Materials Science and Engineering
Discipline
Materials Science and Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Materials Science
Language
eng
Abstract
For the growth of n-type films, a specific ammonia flow rate (or V/III ratio if Ga flux is fixed) was required to obtain films with high electron Hall mobility. X-ray diffraction (XRD), photoluminescence (PL), cross-sectional transmission microscopy (XTEM) and deep level transient spectroscopy (DLTS) results also show consistency with electrical results. For the growth of Mg-doped GaN films, larger ammonia flow rates produced electrically better films. This phenomenon has been accounted for by using a simple Ga vacancy model. Also by carrying out secondary ion mass spectroscopy (SIMS) study for the Mg-doped films, the behavior of Mg and H affected by the ammonia flow rate during the film growth was experimentally investigated for the first time.
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