Interface Structure Studies of Copper Thin Films on C-Plane Sapphire by Crystal Truncation Rod Analysis Using Synchrotron X-Ray
Chung, Ki-Sup
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https://hdl.handle.net/2142/82905
Description
Title
Interface Structure Studies of Copper Thin Films on C-Plane Sapphire by Crystal Truncation Rod Analysis Using Synchrotron X-Ray
Author(s)
Chung, Ki-Sup
Issue Date
1998
Doctoral Committee Chair(s)
Chen, Haydn
Department of Study
Materials Science and Engineering
Discipline
Materials Science and Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
Thin films were grown by UHV-MBE technique. The substrates underwent two different heat treatments prior to Cu deposition. One substrate was annealed in air at $1500\sp\circ$C for 3 hours followed by an anneal in UHV at $1200\sp\circ$C for 30 minutes prior to Cu deposition. The other substrate was not subjected to any high-temperature annealing except for an intermediate temperature cleaning treatment at $600\sp\circ$C before deposition. The CTR from a clean sapphire substrate without Cu coverage and $\rm C\sb6\sb0/\alpha$-$\rm Al\sb2O\sb3$ were measured as a reference. The measured data were fitted to the theoretical equation of diffracted crystal truncation rod intensity profile based upon the kinematical approximation. The CTR analysis method provide us the nature of the terminating layer sequence of the substrate, the structural relaxations (interatomic distance change) of the layers near the surface and the interfacial roughness.
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