Growth Kinetics of GaN and Effects of Flux Ratio and Growth Temperature on Properties of Undoped and Mg-Doped GaN Films Grown by PAMBE
Myoung, Jae-Min
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https://hdl.handle.net/2142/82902
Description
Title
Growth Kinetics of GaN and Effects of Flux Ratio and Growth Temperature on Properties of Undoped and Mg-Doped GaN Films Grown by PAMBE
Author(s)
Myoung, Jae-Min
Issue Date
1998
Doctoral Committee Chair(s)
Kim, Kyekyoon
Department of Study
Materials Science and Engineering
Discipline
Materials Science and Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Physics, Condensed Matter
Language
eng
Abstract
Mg-doped GaN films grown at different temperatures are investigated. It is found that the growth conditions to achieve p-type films are closely related to those for undoped films since p-type conductivity is obtained only after a complete compensation of the background carriers. By supplying a high Mg flux, heavily doped p-type GaN films are obtained. The observation of a very smooth surface for the Mg-doped films grown at T$\sb{\rm s} \ge$ 650$\sp\circ$C suggests a layer-by-layer growth mode with good crystallinity. This fact is due to a large decrease in the activation energy of the diffusion coefficient in the presence of metallic Mg, which promotes the diffusion of Ga adatoms and enhances the step-flow for a layer-by-layer growth.
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