Structural and Optical Properties of Gan-Based Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy
Shim, Kyu-Hwan
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https://hdl.handle.net/2142/82897
Description
Title
Structural and Optical Properties of Gan-Based Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy
Author(s)
Shim, Kyu-Hwan
Issue Date
1997
Doctoral Committee Chair(s)
Kim, Kyekyoon
Department of Study
Materials Science and Engineering
Discipline
Materials Science and Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
$\rm Al\sb{0.2}Ga\sb{0.8}$N-GaN MQWs grown by PAMBE demonstrate their feasibility for optical device application. The excitonic transition properties observed from the MQW structures suggest the implementation of very thin, $<$50 A, quantum wells for high efficiency and emission uniformity.
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