Effects of Intrinsic and Extrinsic Point Defects on Epitaxial Single Crystal Copper-Indium(1-X)-Gallium(x)-Diselenide
Schroeder, David James
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https://hdl.handle.net/2142/82895
Description
Title
Effects of Intrinsic and Extrinsic Point Defects on Epitaxial Single Crystal Copper-Indium(1-X)-Gallium(x)-Diselenide
Author(s)
Schroeder, David James
Issue Date
1997
Doctoral Committee Chair(s)
Rockett, Angus A.
Department of Study
Materials Science and Engineering
Discipline
Materials Science and Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Materials Science
Language
eng
Abstract
The steady state photoconductivity of samples which had been ion implanted with Se and Cr, as well as samples which were contaminated with Na by diffusion, was measured. These measurements were made to determine whether contamination by these elements or severe radiation damage affects minority carrier recombination kinetics. In all cases the photoconductivity was found to be unaffected other than by changes in mobility. (Abstract shortened by UMI.).
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