This item is only available for download by members of the University of Illinois community. Students, faculty, and staff at the U of I may log in with your NetID and password to view the item. If you are trying to access an Illinois-restricted dissertation or thesis, you can request a copy through your library's Inter-Library Loan office or purchase a copy directly from ProQuest.
Permalink
https://hdl.handle.net/2142/82893
Description
Title
Ion Implantation Damage in Semiconductors
Author(s)
Partyka, Paul J., III
Issue Date
1997
Doctoral Committee Chair(s)
Averback, Robert S.
Department of Study
Materials Science and Engineering
Discipline
Materials Science and Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
The diffuse X-ray scattering from defects in ion implanted Si was studied at implantation temperatures ranging from 100 K to 300 K, and the results were compared to simulations of the scattering intensity from realistic defects in Si. In situ studies of keV implants identified close Frenkel pair defects as the primary defects caused by 4.5 keV He$\sp+$ and 20 keV Ga$\sp+$ implantations. The defects created by the He implant had separation distances of about 1.0 nm, and the defects were arranged mostly as single pairs and very small ($<$4) clusters of pairs. The defects created by the Ga implant were slightly more extended (2.0-2.5 nm) and consisted of slightly larger clusters (1-20) of Frenkel pairs. Asymmetry in the scattering intensity indicated the clustering of interstitials at high doses for both ion implants at temperatures as low as 100 K, and annealing of the scattering intensity at 170 K was also attributed to interstitial mobility. Clustering of interstitials preceded amorphization at high doses, indicating the possibility that such interstitial clusters provide a nucleation site for the amorphous material. No evidence for single impact amorphization was observed, and no effect of the surface was observed in measurements performed near the critical angle for total external reflection and also in the simulations.
Use this login method if you
don't
have an
@illinois.edu
email address.
(Oops, I do have one)
IDEALS migrated to a new platform on June 23, 2022. If you created
your account prior to this date, you will have to reset your password
using the forgot-password link below.
