Deposition and Characterization of Silicon Nitride/gallium Arsenide Metal Insulator Semiconductor Structures With Heteroepitaxial Interlayers
Park, Dae-Gyu
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https://hdl.handle.net/2142/82892
Description
Title
Deposition and Characterization of Silicon Nitride/gallium Arsenide Metal Insulator Semiconductor Structures With Heteroepitaxial Interlayers
Author(s)
Park, Dae-Gyu
Issue Date
1997
Doctoral Committee Chair(s)
Morkoc, H.
Department of Study
Materials Science and Engineering
Discipline
Materials Science and Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Physics, Condensed Matter
Language
eng
Abstract
In this thesis, an in-depth study of the growth and characterization of GaAs MIS structures with strained heterointerlayers has been undertaken by exploiting the unique and powerful capabilities of the Epicenter growth and analysis facilities at the University of Illinois. The novel heteroepitaxial interlayers employed between Si$\sb3$N$\sb4$ and GaAs are Si, Si/Ge, Si/Al$\sb{0.3}$Ga$\sb{0.7}$As, Si/GaP, and Si/In$\sb{0.05}$Ga$\sb{0.95}$As. Electrical measurements examining the insulator/semiconductor interface are complemented by in situ analyses such as reflection high electron energy diffraction, scanning tunneling microscopy, and x-ray photoelectron spectroscopy as well as ex situ spectroscopic ellipsometry and high resolution transmission electron microscopy measurements. The culmination of this work is the attainment of an interface trap density near the mid- 10$\sp{10}$ eV$\sp{-1}$ cm$\sp{-2}$ level, which is the lowest values ever reported, on both n- and p-type GaAs MIS structures. This has led to the realization of high transconductance GaAs metal-insulator-semiconductor field-effect transistors (MISFETs) having a maximum transconductance approaching 170 mS/mm.
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