Kinetic and Microstructural Study of Titanium Nitride Deposited by Laser Chemical Vapor Deposition

Egland, Keith Maynard

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Description

Title

Kinetic and Microstructural Study of Titanium Nitride Deposited by Laser Chemical Vapor Deposition

Author(s)

Egland, Keith Maynard

Issue Date

1997

Doctoral Committee Chair(s)

Mazumder, Jyotirmoy

Department of Study

Materials Science and Engineering

Discipline

Materials Science and Engineering

Degree Granting Institution

University of Illinois at Urbana-Champaign

Degree Name

Ph.D.

Degree Level

Dissertation

Keyword(s)

Engineering, Materials Science

Language

eng

Abstract

The deposition apparent activation energy was calculated as 122 $\pm$ 9 kJ/mole using growth rates measured by film height and 117 $\pm$ 23 kJ/mole using growth rates measured by LIF signals. This puts the process in the surface kinetic growth regime over the temperature range 1370-1610 K. Above N$\sb2$ and H$\sb2$ levels of 1.25% and below TiCl$\sb4$ input of 4.5%, the growth rate has a half-order dependence on nitrogen and a linear dependence on hydrogen and is approximated by$$\rm r = {{kP\sb{TiCl\sb4}P\sb{H\sb2}P\sbsp{N\sb2}{1/2}exp\left({{-}E\sb{a}\over {RT}\right)}\over{1 + P\sb{Ar}}}}.$$Since nitrogen positively affects growth rate (when added to a TiCl$\sb4$+H$\sb2$ mixture), stepwise reduction of TiCl$\sb4$ to Ti by hydrogen does not occur. $\rm NH\sb{x}$ complexes are clearly involved in the growth mechanism; a likely combination of rate determining steps is the formation of NH and the initial reduction of TiCl$\sb4$ by hydrogen.

Graduation Semester

1997

Type of Resource

text

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