In Situ Measurement and Modification of the Interface Potential in Hydrogenated Amorphous Silicon Solar Cells

Nuruddin, Ahmad

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Description

Title

In Situ Measurement and Modification of the Interface Potential in Hydrogenated Amorphous Silicon Solar Cells

Author(s)

Nuruddin, Ahmad

Issue Date

1997

Doctoral Committee Chair(s)

Abelson, J.R.

Department of Study

Materials Science and Engineering

Discipline

Materials Science and Engineering

Degree Granting Institution

University of Illinois at Urbana-Champaign

Degree Name

Ph.D.

Degree Level

Dissertation

Keyword(s)

Engineering, Materials Science

Language

eng

Abstract

Atomic H treatment leads to ZnO reduction which enhances the potential barrier at ZnO/p$\sp{+}$ a-Si,C:H interface, and lowers the built-in potential in the p$\sp{+}$ layer. Ozone treated ZnO surface reduces the potential barrier, but depletes the surface conductivity. A treatment of atomic H and ozone on ZnO surface improves the ZnO/p$\sp{+}$ a-Si,C:H interface potential, without sacrificing the conductivity of ZnO. As a result, the interface potential barrier reduces from 0.45 to 0.03 Volt, and the built-in potential in the p$\sp{+}$ layer increases $\approx$20 mV. Insertion of $\sim$25 A unhydrogenated p$\sp{+}$ a-Si,C between ZnO/p$\sp{+}$ a-Si,C:H completely eliminates the interface potential barrier. (Abstract shortened by UMI.).

Graduation Semester

1997

Type of Resource

text

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http://hdl.handle.net/2142/82877

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