Interactions of WF(6) With TiN/Ti Barriers During W Chemical Vapor Deposition
Ganapathiraman, Ramanath
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https://hdl.handle.net/2142/82873
Description
Title
Interactions of WF(6) With TiN/Ti Barriers During W Chemical Vapor Deposition
Author(s)
Ganapathiraman, Ramanath
Issue Date
1997
Doctoral Committee Chair(s)
Allen, L.H.
Department of Study
Materials Science and Engineering
Discipline
Materials Science and Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Physics, Condensed Matter
Language
eng
Abstract
F buildup in the Ti underlayer of TiN/Ti bilayers is suggested to be the major cause of delamination. High F concentration causes phase formation and alters the chemistry of the Ti/SiO$\sb2$ interface. Large stresses generated due to TiF$\sb3$ formation, and destruction of the Ti glue layer due to TiF$\sb4$ evolution jeopardize the adhesion of the TiN/Ti bilayer at the Ti/SiO$\sb2$ interface. The delamination problem can be alleviated by improving the TiN microstructure and/or by hastening the W nucleation process to minimize the interaction of WF$\sb6$ with the Ti underlayer.
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