Quantifying Nanoscale Order in Amorphous Materials via Fluctuation Electron Microscopy
Bogle, Stephanie Nicole
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https://hdl.handle.net/2142/82851
Description
Title
Quantifying Nanoscale Order in Amorphous Materials via Fluctuation Electron Microscopy
Author(s)
Bogle, Stephanie Nicole
Issue Date
2009
Doctoral Committee Chair(s)
Abelson, John R.
Department of Study
Materials Science and Engineering
Discipline
Materials Science and Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Materials Science
Language
eng
Abstract
The use of the STEM mode of FEM offers significant advantages in identifying artifacts in the variances. Artifacts, caused by non-idealities in the sample unrelated to nanoscale order, can easily dominate the measured variance, producing erroneous results. We show that reexamination and correction of the contributions of artifacts to variance is necessary to obtain an accurate and quantitative description of the structure of amorphous materials. Using variable resolution FEM we are able to extract a characteristic length of ordered regions in two different amorphous silicon samples. Having eliminated the noise contribution to the variance, we show here the first demonstration of a consistent characteristic length at all values of k. The experimental results presented here are the first to be consistent with both FEM theory and simulations.
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