Investigation of Ohmic Contacts for Gallium Nitride-Based Power Electronic Devices Using Molecular Beam Epitaxy
Seo, Huichan
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https://hdl.handle.net/2142/82835
Description
Title
Investigation of Ohmic Contacts for Gallium Nitride-Based Power Electronic Devices Using Molecular Beam Epitaxy
Author(s)
Seo, Huichan
Issue Date
2008
Doctoral Committee Chair(s)
Kim, Kyekyoon
Department of Study
Materials Science and Engineering
Discipline
Materials Science and Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Materials Science
Language
eng
Abstract
The main objective of this research is to investigate and develop stable and reproducible low ohmic contacts through careful monitoring of the GaN surface and distribution of dopants while employing SAG by plasma assisted molecular beam epitaxy (PAMBE). The work specifically involved thin film growth, film characterization, device fabrication and device characterization. To develop the SAG technique and study the effect of etchants on single crystal GaN layers during ohmic contact fabrication, surface bonding and surface morphology were examined. Another important phase of this work consisted of achieving the ohmic contact and device performance enhancement with SAG process and interface analysis by cross sectional TEM. The SAG technique was expanded to nonalloyed ohmic contacts proving that the SAG is crucial in fabrication of nonalloyed ohmic contacts. Finally, high electron mobility transistors (HEMTs) were demonstrated for a realistic DC-DC (direct current) converter.
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