Chemical Vapor Deposition of Metal Diboride and Metal Oxide Thin Films From Borohydride-Bonded Precursors
Yang, Yu
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https://hdl.handle.net/2142/82806
Description
Title
Chemical Vapor Deposition of Metal Diboride and Metal Oxide Thin Films From Borohydride-Bonded Precursors
Author(s)
Yang, Yu
Issue Date
2007
Doctoral Committee Chair(s)
Abelson, John R.
Department of Study
Materials Science and Engineering
Discipline
Materials Science and Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Chemistry, Inorganic
Language
eng
Abstract
The high Tc superconductor MgB2 were deposited at low temperatures (T = 300°C--400°C) from a recently developed highly volatile borohydride-bonded Mg precursor, by means of catalyst-enhanced chemical vapor deposition. The films are stoichiometric and highly crystallized, however, the lattice constants shift away from the MgB2 structure to the diboride structure of the catalyst metal, suggesting that Mg is partially substituted by the corresponding metals.
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