Origins of Enhanced Dielectric Properties in Titania-Modified Tantalum Pentoxide Ceramics
Brennecka, Geoffrey Lee
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https://hdl.handle.net/2142/82784
Description
Title
Origins of Enhanced Dielectric Properties in Titania-Modified Tantalum Pentoxide Ceramics
Author(s)
Brennecka, Geoffrey Lee
Issue Date
2006
Doctoral Committee Chair(s)
Payne, David A.
Department of Study
Materials Science and Engineering
Discipline
Materials Science and Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Materials Science
Language
eng
Abstract
Dense and homogeneous specimens enabled the first detailed investigation into the electrical properties of TiO2-modified H-Ta2O 5 ceramics. Specimens containing 8% TiO2 exhibited dielectric constant (K) values of ∼280 at 20°C with tan delta values ∼0.01, but undoped specimens had tan delta values of ∼0.10 and DC resistivity values of <1011O·cm. Hyper-Raman spectroscopy revealed that the ionic polarizability (and thus the intrinsic K) of H-Ta 2O5 ceramics was independent of TiO2 content. Cryogenic electrical measurements suggested that the structural K ≈ 70-80, and showed that enhanced K values resulted from localized carriers related to compensation for deviations from the fully-edge-shared 89Ta2O 5-11TiO2 composition.
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