Fluctuation Electron Microscopy Investigations of Medium Range Order in a-Silicon and a-Silicon:hydrogen Thin Films
Nittala, Lakshminarayana
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https://hdl.handle.net/2142/82781
Description
Title
Fluctuation Electron Microscopy Investigations of Medium Range Order in a-Silicon and a-Silicon:hydrogen Thin Films
Author(s)
Nittala, Lakshminarayana
Issue Date
2006
Doctoral Committee Chair(s)
Abelson, John R.
Department of Study
Materials Science and Engineering
Discipline
Materials Science and Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Materials Science
Language
eng
Abstract
The first practical version of variable resolution fluctuation electron microscopy has been developed on the JEOL 2010F transmission electron microscope in the Center for Microanalysis of Materials, UIUC. This technique provides information on the spatial extent of the medium range order. Nanodiffraction patterns are obtained using electron probes with a full width at half maximum between 1--4 nm. A convenient method of forming coherent nanoprobes has been developed where the probes are obtained by varying the condenser minilens excitations and the condenser aperture size. The patterns are quantitatively analyzed to get medium range order statistics. Data from amorphous silicon samples grown by different techniques show varying sensitivities to the medium range order depending on the probe size. The application of the pair persistence formulation on the data shows a difference in the characteristic length scales of the ordered regions between the two samples.
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