Transport in Low Pressure Plasma Reactors for Materials Processing
Vyas, Vivek
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https://hdl.handle.net/2142/82766
Description
Title
Transport in Low Pressure Plasma Reactors for Materials Processing
Author(s)
Vyas, Vivek
Issue Date
2005
Doctoral Committee Chair(s)
Kushner, Mark J.
Department of Study
Materials Science and Engineering
Discipline
Materials Science and Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Materials Science
Language
eng
Abstract
"Ionized metal physical vapor deposition (IMPVD) at pressures of a few mTorr is being increasingly used to deposit diffusion barriers and Cu seed layers into high aspect ratio trenches. Understanding plasma-substrate interactions will be critical to designing the next generation processes as the industry transitions to the 45-nm node. In this work, IMPVD using a hollow cathode magnetron source has been modeled at the reactor and feature scale. The consequences of varying process parameters such as power, pressure and magnetic fields have been investigated for a hollow cathode magnetron source and comparison has been made with experiments. The fluxes incident on the wafer are strongly influenced by the magnetic field configuration and strength. A Monte Carlo Feature Profile Model has been used to investigate the Cu seed layer deposition process. The lateral overburden at the mouth of features, or ""overhang,"" is strongly correlated to the ion and neutral energy and angular distributions and the ion flux incident on the substrate."
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