Reaction Path and Crystallograpy of Cobalt Silicide Formation on Silicon(001) by Reaction Deposition Epitaxy
Lim, Chong Wee
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https://hdl.handle.net/2142/82757
Description
Title
Reaction Path and Crystallograpy of Cobalt Silicide Formation on Silicon(001) by Reaction Deposition Epitaxy
Author(s)
Lim, Chong Wee
Issue Date
2004
Doctoral Committee Chair(s)
Greene, Joseph E.
Department of Study
Materials Science and Engineering
Discipline
Materials Science and Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Materials Science
Language
eng
Abstract
I show that high-flux low-energy Ar+ ion irradiation during RDE growth dramatically increases the area fraction of untwinned regions from 0.17 in films grown under standard magnetically balanced conditions in which the ratio JAr+/JCo of the incident Ar> to Co fluxes is 1.4 to 0.72 with JAr+/JCo= 13.3. TEM analyses reveal that increasing JAr+/J Co results in larger values of both the number density and area of untwinned islands. The intense Ar+ ion bombardment under high-ion-flux conditions creates additional low-energy adsorption sites that favor the nucleation of untwinned islands and collisionally enhances the Co adatom surface mobility which, in turn, increases the probability of itinerant Co adatoms reaching these sites.
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