Mechanisms and Reaction Paths for Surface Roughening and Epitaxial Breakdown During Molecular Beam Epitaxy: Fundamental Limits
Bratland, Kenneth Arnold, Jr
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https://hdl.handle.net/2142/82740
Description
Title
Mechanisms and Reaction Paths for Surface Roughening and Epitaxial Breakdown During Molecular Beam Epitaxy: Fundamental Limits
Author(s)
Bratland, Kenneth Arnold, Jr
Issue Date
2003
Doctoral Committee Chair(s)
Greene, Joseph E.
Department of Study
Materials Science and Engineering
Discipline
Materials Science and Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Physics, Condensed Matter
Language
eng
Abstract
Fully-strained Ge1-xSnx layers were grown on Ge(001) to probe the role of incorporated Sn concentrations (C Sn = 1 x 1018 cm-3 to 6.1 at%) on surface roughening pathways leading to EB during LT-MBE (155°C) of compressively strained films. Sn mediates surface morphological evolution through two competing pathways. With x ≲ 0.02, the dominant effect is a Sn-induced smoothening of the surface. At higher x there is a change in Ge1-xSn x(001) growth kinetics due to a rapid increase in compressive strain. This leads to a reduction in h1 with increasing x as strain-induced roughening overcomes the smoothening effects and increases in the roughening rate. I show that by varying C Sn I can controllably manipulate the roughening pathway, and hence h1, over a very wide range.
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