Silicon Carbon(001) Gas-Source Molecular Beam Epitaxy From Methyl Silane and Silicon Hydride: The Effects of Carbon Incorporation and Surface Segregation on Growth Kinetics

Foo, Yong-Lim

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Description

Title

Silicon Carbon(001) Gas-Source Molecular Beam Epitaxy From Methyl Silane and Silicon Hydride: The Effects of Carbon Incorporation and Surface Segregation on Growth Kinetics

Author(s)

Foo, Yong-Lim

Issue Date

2003

Doctoral Committee Chair(s)

Greene, Joseph E.

Department of Study

Materials Science and Engineering

Discipline

Materials Science and Engineering

Degree Granting Institution

University of Illinois at Urbana-Champaign

Degree Name

Ph.D.

Degree Level

Dissertation

Keyword(s)

Engineering, Materials Science

Language

eng

Abstract

At higher growth temperature (725 and 750°C), superlattice structures consisting of alternating Si-rich and C-rich sublayers form spontaneously during the gas-source molecular beam epitaxial growth of Si1-y Cy layers from constant Si2H6 and CH 3SiH3 precursor fluxes. The formation of a self-organized superstructure is due to a complex interaction among competing surface reactions. During growth of the initial Si-rich sublayer, C strongly segregates to the second layer resulting in charge transfer from surface Si atom dangling bonds of to C backbonds. This, in turn, decreases the Si2H6 sticking probability and, hence, the sublayer deposition rate. This continues until a critical C coverage is reached allowing the nucleation and growth of a C-rich sublayer until the excess C is depleted. At this point, the self-organized bilayer process repeats itself.

Graduation Semester

2003

Type of Resource

text

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http://hdl.handle.net/2142/82737

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