Development and Characterization of Ohmic and Schottky Contacts for Gallium Nitride and Aluminum Gallium Nitride Devices
Zhou, Ling
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https://hdl.handle.net/2142/82736
Description
Title
Development and Characterization of Ohmic and Schottky Contacts for Gallium Nitride and Aluminum Gallium Nitride Devices
Author(s)
Zhou, Ling
Issue Date
2002
Doctoral Committee Chair(s)
I. Adesida
Department of Study
Materials Science andEngineering
Discipline
Materials Science andEngineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
Various ohmic contact schemes on p-type GaN, n-type GaN and AlGaN, as well as Schottky contacts on GaN and AlGaN were studied using a wide range of electrical and materials characterization techniques. Band gap engineering and purely process-oriented techniques such as annealing, wet and dry etching were used to improve the electrical characteristics of these contacts. Materials analyses were used to understand the evolution of electrical behavior of these contacts at higher temperatures.
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