Morphological Evolution During Molecular Beam Epitaxy of Germanium/germanium(001) and Silicon/germanium(111)
Raviswaran, Arvind
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https://hdl.handle.net/2142/82732
Description
Title
Morphological Evolution During Molecular Beam Epitaxy of Germanium/germanium(001) and Silicon/germanium(111)
Author(s)
Raviswaran, Arvind
Issue Date
2002
Doctoral Committee Chair(s)
Cahill, D.G.
Department of Study
Materials Science and Engineering
Discipline
Materials Science and Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Materials Science
Language
eng
Abstract
I have investigated the evolution of islands during the heteroepitaxy of Si on Ge(111). This study involves a systematic investigation of the island nucleation kinetics, morphology and microstructure for various thicknesses and deposition temperatures. The islands formed are predominantly three-dimensional. A large density of islands (>1011 cm-2) is observed during growth at low temperatures (600°C) yield a lower density of islands. The activation energy for the nucleation of these islands is ≈1.7 eV. The islands deposited at temperatures <550°C are predominantly coherent, while those formed at higher temperatures are incoherent, with a transition size of ≈18 nm.
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