Fluctuation Electron Microscopy of Medium Range Order in Ion -Implanted Amorphous Silicon
Cheng, Ju-Yin
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https://hdl.handle.net/2142/82728
Description
Title
Fluctuation Electron Microscopy of Medium Range Order in Ion -Implanted Amorphous Silicon
Author(s)
Cheng, Ju-Yin
Issue Date
2002
Doctoral Committee Chair(s)
Gibson, J.M.
Department of Study
Materials Science and Engineering
Discipline
Materials Science and Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Materials Science
Language
eng
Abstract
"The results of post-anneal implantation also indicate that the degree of medium-range ordering depends on ion mass. More specifically, the degree of medium-range ordering increases with ion mass and energy. This has been confirmed by the observations of depth dependence and the effect of implantation. We speculate that the origin of the paracrystalline state during implantation is associated with ""energy spikes."" This model can also qualitatively explain the dependence on ion mass and energy. Our results have an important implication for the processing of silicon by ion implantation, and further computer simulations of this fascinating phenomenon will be very helpful."
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