Carbon Incorporation Pathways and Lattice Site Distributions in Silicon Carbide/silicon(001) and Germanium Carbide/germanium(001) Alloys Grown by Molecular Beam Epitaxy

Park, Se-Yang

Permalink

https://hdl.handle.net/2142/82706 Copy

Description

Title

Carbon Incorporation Pathways and Lattice Site Distributions in Silicon Carbide/silicon(001) and Germanium Carbide/germanium(001) Alloys Grown by Molecular Beam Epitaxy

Author(s)

Park, Se-Yang

Issue Date

2001

Doctoral Committee Chair(s)

Greene, Joseph E.

Department of Study

Materials Science and Engineering

Discipline

Materials Science and Engineering

Degree Granting Institution

University of Illinois at Urbana-Champaign

Degree Name

Ph.D.

Degree Level

Dissertation

Keyword(s)

Physics, Condensed Matter

Language

eng

Abstract

The key results of this research can be summarized as follows: (1) In Si1-yCy/Si(001), alloys, I find that all C incorporates in substitutional sites at Ts < 580°C with y ≤ 0.026. At Ts ≥ 580°C, increasing y and Ts leads to increase in the fraction of dicarbon complexes and the formation of periodic bulk planar structures consisting of ordered Si4C layers which form as a result of C surface segregation. (2) In contrast to Si1-yC y/Si(001), I find that irrespective of y and Ts values, complete substitutional C incorporation in Ge1-yCy/Ge(001) is not possible. A fraction of the total C concentration is always incorporated in nanoclusters. Increasing y and/or Ts leads to an increase in the fraction of C in nanoclusters due to a higher C-C encounter probability at the growth surface. (Abstract shortened by UMI.).

Graduation Semester

2001

Type of Resource

text

Permalink

http://hdl.handle.net/2142/82706

Owning Collections