Crystallization of Isolated Amorphous Zones in Semiconductors
Hollar, Eric Prater
This item is only available for download by members of the University of Illinois community. Students, faculty, and staff at the U of I may log in with your NetID and password to view the item. If you are trying to access an Illinois-restricted dissertation or thesis, you can request a copy through your library's Inter-Library Loan office or purchase a copy directly from ProQuest.
Permalink
https://hdl.handle.net/2142/82704
Description
Title
Crystallization of Isolated Amorphous Zones in Semiconductors
Author(s)
Hollar, Eric Prater
Issue Date
2001
Doctoral Committee Chair(s)
Robertson, Ian M.
Department of Study
Materials Science and Engineering
Discipline
Materials Science and Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Materials Science
Language
eng
Abstract
Software was developed to detect, measure and track individual amorphous zones throughout a series of irradiation micrographs. Characteristic zone shrinkage behaviors were observed. A simple shrinkage model suggests that the defects responsible for regrowth are created very near the crystalline/amorphous interface. In the sub-threshold electron energy regime, crystallization is thought to be initiated by an electronic excitation which creates a dangling bond pair. By migrating along the crystalline/amorphous interface these dangling bonds are capable of reconstructing to the crystal a large number of atoms through a mechanism similar to that for thermally activated solid phase epitaxial growth.
Use this login method if you
don't
have an
@illinois.edu
email address.
(Oops, I do have one)
IDEALS migrated to a new platform on June 23, 2022. If you created
your account prior to this date, you will have to reset your password
using the forgot-password link below.
