Chemical Vapor Etching of Copper Using Oxygen and Various Beta-Diketones
Steger, Richard Mero
This item is only available for download by members of the University of Illinois community. Students, faculty, and staff at the U of I may log in with your NetID and password to view the item. If you are trying to access an Illinois-restricted dissertation or thesis, you can request a copy through your library's Inter-Library Loan office or purchase a copy directly from ProQuest.
Permalink
https://hdl.handle.net/2142/82462
Description
Title
Chemical Vapor Etching of Copper Using Oxygen and Various Beta-Diketones
Author(s)
Steger, Richard Mero
Issue Date
1998
Doctoral Committee Chair(s)
Masel, R.I.
Department of Study
Chemical Engineering
Discipline
Chemical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Chemical
Language
eng
Abstract
A vertical-flow warm walled reactor was constructed to investigate the reactions of oxygen and beta-diketones on copper metal. The etch rate was studied as a function of time, temperature, grain orientation, oxygen partial pressure, beta-diketone, and beta-diketone partial pressure. Studies were performed at total pressures ranging from 10 to 200 Torr and substrate temperatures of 250 to 400°C. Copper disks, 9 mm in diameter, as well as thin evaporated films were used as substrates. The production of the corresponding Cu(II) beta-diketone was confirmed by trapping the products down stream of the reactor and analyzing them using gas chromatography/mass spectroscopy. Etch rates over 1.5 mum/min were achieved at substrate temperature of 350°C using 200 Torr of O 2 and 50 Torr of hexafluoropentanedione. The degree of surface contamination was found to be a functions of the O2/hfacH ratio and temperature. At low O2/hfacH ratios the etching took place cleanly while high O2/hfacH ratios produced a thick oxide film The activation energy for etching at high O2/beta-diketone was found to decrease with decreasing sublimation temperature for the corresponding metal chelate. Finally, the decomposition of hfacH was found to be negligible when using a copper substrate while Ni, 316 SS, and Pt catalyst powder showed significant hfacH decomposition.
Use this login method if you
don't
have an
@illinois.edu
email address.
(Oops, I do have one)
IDEALS migrated to a new platform on June 23, 2022. If you created
your account prior to this date, you will have to reset your password
using the forgot-password link below.
